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VISHAYSIHD6N80AE-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 3.2 AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
SIHD6N80AE-GE3
Thương hiệu
Mã kho
200-6867
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET. Low figure-of-merit Low effective capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Integrated Zener diode ESD protection

The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHD6N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 3.2 A, 5 A
Maximum Drain Source Voltage 850V
Series E
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 0.95Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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