Skip to content

VISHAYSIHG17N80AE-GE3Transistor: N-MOSFET

Channel Type NMaximum Continuous Drain Current 15AMaximum Gate Threshold Voltage 2 → 4 VNumber of Elements per Chip 1
Mã nhà sản xuất
SIHG17N80AE-GE3
Thương hiệu
Mã kho
210-4986
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The Vishay E Series Power MOSFET has TO-247AC package type with 15 A drain current. Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS)

The Vishay E Series Power MOSFET has TO-247AC package type with 15 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHG17N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 15A
Maximum Drain Source Voltage 800V
Series E
Package Type TO-247AC
Pin Count 3
Maximum Drain Source Resistance 0.25Ω
Maximum Gate Threshold Voltage 2 → 4 V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về CV@chanhvinh.com để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare