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VISHAYSiHG186N60EF-GE3N-Channel MOSFET, 8.4 A, 600 V, 3-Pin TO-247AC Vishay SiHG186N60EF-GE3

Channel Type NMaximum Continuous Drain Current 8.4AMaximum Gate Threshold Voltage 3 → 5 VNumber of Elements per Chip 1
Mã nhà sản xuất
SiHG186N60EF-GE3
Thương hiệu
Quy cách đóng gói
In a Tube of 25
Mã kho
2104987
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com 📄 Datasheet (PDF)

The Vishay EF Series Power MOSFET With Fast Body Diode has TO-247AC package type.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SiHG186N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 8.4A
Maximum Drain Source Voltage 600V
Series EF
Package Type TO-247AC
Pin Count 3
Maximum Drain Source Resistance 0.168Ω
Maximum Gate Threshold Voltage 3 → 5 V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về CV@chanhvinh.com để nhận báo giá nhanh.

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📄 Datasheet VISHAY SiHG186N60EF-GE3 (PDF)