VISHAYSIHG21N80AEF-GE3Transistor: N-MOSFET
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 16.3AMaximum Gate Threshold Voltage 4V
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The Vishay E Series Power MOSFET reduced switching and conduction losses. Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er))
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))