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SIHG25N40D-GE3 787-9169

VISHAYSIHG25N40D-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 25AMaximum Power Dissipation 278W
Mã nhà sản xuất
SIHG25N40D-GE3
Thương hiệu
VISHAY
Mã kho
145-1829
Liên hệ
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N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHG25N40D-GE3
Channel Type N
Maximum Continuous Drain Current 25A
Maximum Drain Source Voltage 400V
Series D Series
Package Type TO-247AC
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 170mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 278W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Maximum Operating Temperature +150°C
Width 5.31mm
Number of Elements per Chip 1
Length 15.87mm
Typical Gate Charge @ Vgs 44.4 nC @ 10 V
Transistor Material Si
Minimum Operating Temperature -55°C
Height 20.82mm

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