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VISHAYSIHH070N60EF-T1GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 23 AMaximum Gate Threshold Voltage 5V
Mã nhà sản xuất
SIHH070N60EF-T1GE3
Thương hiệu
Mã kho
200-6831
Liên hệ
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The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode. 4th generation E series technology Low figure-of-merit Low effective capacitance Reduced switching and conduction losses Avalanche energy rated (UIS)

The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHH070N60EF-T1GE3
Channel Type N
Maximum Continuous Drain Current 23 A, 36 A
Maximum Drain Source Voltage 650V
Package Type PowerPAK 8 x 8
Series EF
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 0.071Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Number of Elements per Chip 1

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