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SIHP068N60EF-GE3 204-7256

VISHAYSIHP068N60EF-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 41AMaximum Gate Threshold Voltage 5V
Mã nhà sản xuất
SIHP068N60EF-GE3
Thương hiệu
VISHAY
Mã kho
204-7255
Liên hệ
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The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses. Avalanche energy rated (UIS) Low figure-of-merit (FOM) Ron x Qg

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Avalanche energy rated (UIS)

Low figure-of-merit (FOM) Ron x Qg

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHP068N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 41A
Maximum Drain Source Voltage 600V
Series SiHP068N60EF
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 0.068Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Number of Elements per Chip 1

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