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SIHP22N60EF-GE3 188-4996

VISHAYSIHP22N60EF-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 19A
Mã nhà sản xuất
SIHP22N60EF-GE3
Thương hiệu
VISHAY
Mã kho
188-4996
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

EF Series Power MOSFET With Fast Body Diode. Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC)

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHP22N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 19A
Maximum Drain Source Voltage 600V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 182mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 179W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 48 nC @ 10 V
Width 4.65mm
Length 10.51mm
Number of Elements per Chip 1
Height 9.01mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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