VISHAYSIHU2N80AE-GE3N-Channel MOSFET, 2.9 A, 800 V, 3-Pin IPAK Vishay SIHU2N80AE-GE3
Channel Type NMaximum Continuous Drain Current 2.9AMaximum Gate Threshold Voltage 2 → 4 VKiểu lắp Through Hole
Liên hệ
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection