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SIHU4N80AE-GE3 188-4943

VISHAYSIHU4N80AE-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 4.1A
Mã nhà sản xuất
SIHU4N80AE-GE3
Thương hiệu
VISHAY
Mã kho
188-4943
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

E Series Power MOSFET Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Ciss) Reduced switching and conduction losses APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC)

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHU4N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 4.1A
Maximum Drain Source Voltage 800V
Package Type IPAK (TO-251)
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 1.44Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 62.5W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Number of Elements per Chip 1
Width 2.38mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 11 nC @ 10 V
Length 6.73mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V
Height 6.22mm

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