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SIHW21N80AE-GE3 188-5016

VISHAYSIHW21N80AE-GE3Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 17.4A
Mã nhà sản xuất
SIHW21N80AE-GE3
Thương hiệu
VISHAY
Mã kho
188-5016
Liên hệ
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E Series Power MOSFET. Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC)

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHW21N80AE-GE3
Channel Type N
Maximum Continuous Drain Current 17.4A
Maximum Drain Source Voltage 800V
Package Type TO-247AD
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 235mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 32W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Width 5.31mm
Typical Gate Charge @ Vgs 48 nC @ 10 V
Length 16.26mm
Height 21.46mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

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