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VISHAYSQJ481EP-T1_GE3Transistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1.2VMaximum Continuous Drain Current 16A
Mã nhà sản xuất
SQJ481EP-T1_GE3
Thương hiệu
Mã kho
178-3883
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Vishay MOSFET The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Lead (Pb) free Operating temperature ranges between -55°C and 175°C TrenchFET power MOSFET Certifications AEC-Q101 ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 Rg tested UIS tested

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

  • Halogen free
  • Lead (Pb) free
  • Operating temperature ranges between -55°C and 175°C
  • TrenchFET power MOSFET

Certifications

  • AEC-Q101
  • ANSI/ESD S20.20:2014
  • BS EN 61340-5-1:2007
  • Rg tested
  • UIS tested
THÔNG SỐ KỸ THUẬT
Manufacturer Vishay Siliconix
Manufacturer Part No. SQJ481EP-T1_GE3
Channel Type P
Maximum Continuous Drain Current 16A
Maximum Drain Source Voltage 80V
Series TrenchFET
Package Type PowerPAK SO-8L
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 45W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Transistor Material Si
Width 5mm
Maximum Operating Temperature +175°C
Length 5.99mm
Typical Gate Charge @ Vgs 33 nC @ 10 V
Number of Elements per Chip 1
Height 1.07mm
Automotive Standard AEC-Q101
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

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