VISHAYVS-C06ET07T-M3Diode: Schottky rectifying
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 6A. Majority carrier diode using Schottky technology on SiC wide band gap material Positive VF temperature coefficient for easy paralleling Virtually no recovery tail and no switching losses Temperature invariant switching behaviour 175 °C maximum operating junction temperature MPS structure for high ruggedness to forward current surge events
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 6A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events