VISHAYVSMA1094600IR transmitter
The Vishay high power infrared emitting diode has 940 nm centroid wavelength. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. It comes in high power SMD with lens package form. It has 3.4 x 3.4 x 1.8 mm (L x W x H) dimensions. Angle of half intensity ϕ = ± 60° Low thermal resistance 6 K/W < RthJSP < 9 K/W ESD up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001) Floor life 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering
The Vishay high power infrared emitting diode has 940 nm centroid wavelength. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A. It comes in high power SMD with lens package form. It has 3.4 x 3.4 x 1.8 mm (L x W x H) dimensions.
Angle of half intensity ϕ = ± 60°
Low thermal resistance 6 K/W < RthJSP < 9 K/W
ESD up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001)
Floor life 168 h, MSL 3, according to J-STD-020
Lead (Pb)-free reflow soldering