WINBONDW29N04GVSIAAW29N04GVSIAA
Block Organisation SymmetricalCell Type SLC NANDInterface Type ParallelMaximum Operating Supply Voltage 3.6V
Liên hệ
4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
















